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IXFN60N80P

800V Power MOSFET

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IXFN60N80P Ixys
IXFN60N80P Ixys
IXFN60N80P Ixys
pcs
ID Code:181387
Manufacturer:Ixys
Price with VAT : 43,50 €
Price without VAT : 35,95 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: IXFN60N80P
Central warehouse Zdice: 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 35,95 €43,50 €
5 + 33,89 €41,01 €
10 + 29,78 €36,04 €
20 + 28,78 €34,82 €
800V Power MOSFET

Basic information:

Marking manufacturerIXFN60N80P 
Type of component:FET Tranzistor 
KategorieFET N-Channel 
Configuration:Single 1*(T-BD) 
Specification:!_enhancement mode_! 
Construction:1*FET-BD 
Number of circuits (in case) 1 ks
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):10 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 800 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)53 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)53 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
Pmax with heatsink (TC=25°C)1040 [W]
Input Logic Level (UGS level)10V 
RDS (on) 10V (UGS=10÷15V)140 [mΩ]
trr recovery time (If=Inom.,@25°C)250 [ns]
Qg (Total Gate Charge)250 [nC]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.12 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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