Hybrid SiC

Type of casing:(6)

!_mod_! (1) MODUL (5)

Case:(6)

MODUL - E (1) SEMITOP-3 (1) SEMITRANS-3 (3) SEMIX-3p (1)

Configuration:(6)

!_singl-e 3*(t+d)_! (1) Half Bridge (5)

U_dc (U_RRM, U_CEO, U_max) [V] (6)?

U_dc - definitions for components

U_dc= U_RRM - Diode

U_dc= U_DRM , U_RRM - Thyristor

U_dc= U_CEO - Transistors

U_dc= U_max -

1200 (5) 3300 (1)

I_dc_max (Tc/Ta=25÷160°C) [A] (6)?

Current at the lowest temperature.
The specifications in the datasheet.

I_dc=I_{F (AV)} - Diode

I_dc=I_{T (AV)} - Thyristor

I_dc=I_{C max} - BJT, IGBT

I_dc=I_{D max} - Transistor: FET

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	SK50GH12T4T IGBT 1200V ID: 177527 Mfr.no.: SK50GH12T4T	on request
	SKM200GB12F4SiC2 IGBT 1200V Hybrid SiC ID: 173633 Mfr.no.: SKM200GB12F4SiC2	on request Manufacturer: Semikron
	SKM200GB12F4SiC3 IGBT 1200V Hybrid SiC ID: 185571 Mfr.no.: SKM200GB12F4SiC3	Manufacturer: Semikron
	SKM200GB12T4SiC2 IGBT 1200V Hybrid SiC ID: 173631 Mfr.no.: SKM200GB12T4SiC2	on request Manufacturer: Semikron