Hybrid SiC

Configuration:(7)

!_singl-e 3*(t+d)_! (1) Half Bridge (5) Sixpack (1)

U_dc (U_RRM, U_CEO, U_max) [V] (7)?

U_dc - definitions for components

U_dc= U_RRM - Diode

U_dc= U_DRM , U_RRM - Thyristor

U_dc= U_CEO - Transistors

U_dc= U_max -

1200 (6) 3300 (1)

I_dc_max (Tc/Ta=25÷160°C) [A] (7)?

Current at the lowest temperature.
The specifications in the datasheet.

I_dc=I_{F (AV)} - Diode

I_dc=I_{T (AV)} - Thyristor

I_dc=I_{C max} - BJT, IGBT

I_dc=I_{D max} - Transistor: FET

Type of casing:(7)

!_mod_! (1) MODUL (6)

	DIM1200ESM33-MH00 Fast IGBT Module 3300V/1200A Single Fast SiC Diodes ID: 185397 Mfr.no.: DIM1200ESM33-MH00	on request Manufacturer: Dynex Semiconductor
	SEMiX603GB12E4SiCp IGBT 1200V Hybrid SiC ID: 173637 Mfr.no.: SEMiX603GB12E4SiCp	on request Manufacturer: Semikron
	SK50GH12T4T IGBT 1200V ID: 177527 Mfr.no.: SK50GH12T4T	on request
	SKIM459GD12F4V3 Hybrid SiC Trench IGBT Modules 1200V ID: 186555 Mfr.no.: SKiM459GD12F4V3	Manufacturer: Semikron
	SKM200GB12F4SiC2 IGBT 1200V Hybrid SiC ID: 173633 Mfr.no.: SKM200GB12F4SiC2	on request Manufacturer: Semikron
	SKM200GB12F4SiC3 IGBT 1200V Hybrid SiC ID: 185571 Mfr.no.: SKM200GB12F4SiC3	Manufacturer: Semikron
	SKM200GB12T4SiC2 IGBT 1200V Hybrid SiC ID: 173631 Mfr.no.: SKM200GB12T4SiC2	on request Manufacturer: Semikron