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Semiconductors
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IGBT
Hybrid SiC

Hybrid SiC

Configuration:(10)

Half Bridge 1*(Phase Leg) (4) Half Bridge 3*(Phase Leg) (2) Low side 1*(Boost Chopper) (2) Low side 2*(Boost Chopper) (1) single-E3*(T+D) (1)

Construction:(10)

1*(IGBT+D)+D (2) 2*(IGBT+D) (4) 2*IGBT+4*D (1) 3*(IGBT+D) (1) 6*(IGBT+D) (2)

U_dc (U_RRM, U_CEO, U_max) [V] (10)?

U_dc - definitions for components

U_dc= U_RRM - Diode

U_dc= U_DRM , U_RRM - Thyristor

U_dc= U_CEO - Transistors

U_dc= U_max -

1200 (8) 1700 (1) 3300 (1)

I_dc_max (Tc/Ta=25÷160°C) [A] (10)?

Current at the lowest temperature.
The specifications in the datasheet.

I_dc=I_{F (AV)} - Diode

I_dc=I_{T (AV)} - Thyristor

I_dc=I_{C max} - BJT, IGBT

I_dc=I_{D max} - Transistor: FET

45 (1) 75 (1) 80 (1) 246 (1) 312 (2) 475 (1) 608 (1) 1100 (1) 1200 (1)

Case:(10)

MODUL - E (1) SEMITRANS-3 (3) SEMIX-3p (1) !_skim-93_! (2) SOT-227 (2) !_sp3f_! (1)

Number of circuits (in case) Type of material: Material Base T_min (minimum working temperature) T_max (maximum working temperature) U_isol (@25°C/1min/50Hz) U_F (maximum forward voltage) U_{CE (sat)} (@25°C) P_max with heatsink (T_C=25°C) R_th-c (thermal resistance) Rthjc1 IGBT Rthjc2 Dioda, Tyristor R_th-a (thermal resistance) Input Logic Level (U_GS level) t_rr recovery time (If=Inom.,@25°C) t_r (Turn-on / rise time) t_f/t_q (Turn-off / fall time) f_max max.frequency (max./typ.) Q_g (Total Gate Charge) C_in (Input Capacitance) RM - Pitch pins RM1 - Spacing of rows Number of Pins RoHS REACH D - Outer diameter W - Width L - Length H - Height Rozměry/Velikost (LxWxH) Dimensions of outlets Lv - Length of outlets RoHS1

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APT25GLQ120JCU2

APT25GLQ120JCU2 Trans IGBT Module 1200V 45A 170W SOT-227 Tube
ID: 189834 Mfr.no.: APT25GLQ120JCU2

Manufacturer: Microchip Technology

APT40GLQ120JCU2

APT40GLQ120JCU2 Trans IGBT Module 1200V 80A 312W SOT-227 Tube
ID: 189835 Mfr.no.: APT40GLQ120JCU2

Manufacturer: Microchip Technology

APTGLQ40DDA120CT3G

APTGLQ40DDA120CT3G Trans IGBT Module 1200V 75A 250W SP3F Tube
ID: 189836 Mfr.no.: APTGLQ40DDA120CT3G

Manufacturer: Microchip Technology

DIM1200ESM33-MH00

DIM1200ESM33-MH00 Fast IGBT Module 3300V/1200A Single Fast SiC Diodes
ID: 185397 Mfr.no.: DIM1200ESM33-MH00

on request

Manufacturer: Dynex Semiconductor

SEMiX603GB12E4SiCp

SEMiX603GB12E4SiCp IGBT 1200V Hybrid SiC
ID: 173637 Mfr.no.: SEMiX603GB12E4SiCp

on request

Manufacturer: Semikron

SKiM429GD17E44F

SKiM429GD17E44F Trench IGBT Modules 1700V
ID: 191870 Mfr.no.: SKiM429GD17E44F

Quantity [pcs]	1+	9+	45+	135+
EUR/pcs	799,0893	639,2455	575,3512	511,4137

Total stock: 1

Manufacturer: Semikron

RoHS

SKIM459GD12F4V3

SKIM459GD12F4V3 Hybrid SiC Trench IGBT Modules 1200V
ID: 186555 Mfr.no.: SKiM459GD12F4V3

Manufacturer: Semikron

SKM200GB12F4SiC2

SKM200GB12F4SiC2 IGBT 1200V Hybrid SiC
ID: 173633 Mfr.no.: SKM200GB12F4SiC2

on request

Manufacturer: Semikron

SKM200GB12F4SiC3

SKM200GB12F4SiC3 IGBT 1200V Hybrid SiC
ID: 185571 Mfr.no.: SKM200GB12F4SiC3

Manufacturer: Semikron

SKM200GB12T4SiC2

SKM200GB12T4SiC2 IGBT 1200V Hybrid SiC
ID: 173631 Mfr.no.: SKM200GB12T4SiC2

on request

Manufacturer: Semikron

All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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