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IGBT 1200V

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MG50Q1BS1 Toshiba
MG50Q1BS1 Toshiba
MG50Q1BS1 Toshiba
ID Code:144264
Price with VAT : 83,596598 €
Price without VAT : 69,088097 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MG50Q1BS1
Central warehouse: 0 pcs
Factory Lead Time: Obsolete
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 69,088097 €83,596597 €
10 + 66,620667 €80,611007 €
25 + 64,153233 €77,625412 €
50 + 61,685803 €74,639822 €
IGBT 1200V

Basic information:

Marking manufacturerMG50Q1BS1 
Factory Lead TimeObsolete [wk]
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Number of circuits (in case) 1 ks
Case type:Modul 
Type of material:Si-Silicon 

Packaging and weight:

Weight:93.5 [g]
Type of packaging:BOX 
Small package (Number of units):25 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)50 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UCE (sat) (@25°C)2.7 [V]
Pmax with heatsink (TC=25°C)300 [W]
tr (Turn-on / rise time)300 [ns]
tf/tq (Turn-off / fall time)600 [ns]
Cin (Input Capacitance)7800 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.41 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

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