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MSC010SDA120B

SiC diode 1200V 12A/135°C

pcs
ID Code:185672
Manufacturer:Microsemi / Microchip Technology
Price with VAT : 4,9998 €
Price without VAT : 4,1321 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSC010SDA120B
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 4,1321 €4,9998 €
3 + 4,0620 €4,9150 €
SiC Schottky Barrier Diodes SiC 1200V 12A/135°C

Basic information:

Marking manufacturerMSC010SDA120B 
Type of casing:THT 
Case:TO-247AC-2 
KategorieDiode Schottky THT 
Type of component:!_diode schottky sic_! 
Configuration:1xDiode 
Number of circuits (in case) 1 ks
Type of material:!_sic full_! 
Gap (by product number) 999.99 [mm]
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:6.2 [g]
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)25 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)25 [A]
IF(AV) (Tc/Ta=130÷139°C)12 [A]
IF(AV) (Tc/Ta=140÷149°C)[A]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
du/dt (critical rate of rise of on-state voltage)999999 [V/µs]
Pmax with heatsink (TC=25°C)115 [W]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc2 Dioda, Tyristor1.3 [°C/W]
Number of Pins
Dimensions of outlets0.00 [mm]

Alternatives and replacements

Alternative products 1:C4D10120H 

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