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700 V, 15 mOhm SiC MOSFET in a TO-268 (D3PAK), Id = 126A

ID Code:187596
Manufacturer:Microchip Technology
Price with VAT : 50,678042 €
Price without VAT : 41,882679 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSC015SMA070S
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 41,882679 €50,678042 €
5 + 40,136346 €48,564979 €
10 + 35,409433 €42,845414 €
25 + 33,799841 €40,897808 €

Basic information:

Marking manufacturerMSC015SMA070S 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:single 1*(T-BD) 
Specification:SiC N-Channel MOSFET 
Case type:SMD 
Case [inch] :TO-268AA 
Type of material:SiC Full 

Packaging and weight:

Weight:4.2 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 700 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)89 [A]
Pmax with heatsink (TC=25°C)370 [W]
Input Logic Level (UGS level)20V 
trr recovery time (If=Inom.,@25°C)40 [ns]
tr (Turn-on / rise time)[ns]
tf/tq (Turn-off / fall time)15 [ns]
Qg (Total Gate Charge)215 [nC]
Cin (Input Capacitance)4500 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:TO-268 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.27 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.41 [°C/W]
RM - Pitch pins5.45 [mm]
L - Length 15 [mm]
W - Width 16 [mm]
H - Height [mm]
Dimensions of outlets1,32 [mm]
Lv - Length of outlets3.81 [mm]

Alternatives and replacements

Alternative products 1:C3M0032120J1 

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