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MSC025SMA120S

1200V Mosfet SiC, 89A / D3PAK

pcs
ID Code:186369
Manufacturer:Microchip Technology
Price with VAT : 56,778770 €
Price without VAT : 46,924603 €
VAT:21 %
Availability:In stock
Total stock:30 pcs
Marking manufacturer: MSC025SMA120S
Central warehouse: 30 pcs
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 46,924603 €56,778770 €
5 + 44,970635 €54,414468 €
10 + 39,662698 €47,991865 €
25 + 37,859921 €45,810504 €
1200V Mosfet SiC, 89A / D3PAK Fast and reliable body diode

Basic information:

Marking manufacturerMSC025SMA120S 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:single 1*(T-BD) 
Specification:SiC N-Channel MOSFET 
Construction:1*FET-BD 
Case type:SMD 
Case [inch] :TO-268AA 
Type of material:SiC Full 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:4.2 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)63 [A]
Pmax with heatsink (TC=25°C)370 [W]
Input Logic Level (UGS level)20V 
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)14 [ns]
tf/tq (Turn-off / fall time)18 [ns]
Qg (Total Gate Charge)232 [nC]
Cin (Input Capacitance)3020 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:TO-268 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.27 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.41 [°C/W]
RM - Pitch pins5.45 [mm]
L - Length 15 [mm]
W - Width 16 [mm]
H - Height [mm]
Dimensions of outlets1,32 [mm]
Lv - Length of outlets3.81 [mm]

Alternatives and replacements

Alternative products 1:C3M0032120J1 

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