1200V Mosfet SiC, 89A / D3PAK
ID Code: | 186369 |
Manufacturer: | Microchip Technology |
Price with VAT : | 58,760780 € |
Price without VAT : | 48,562628 € |
VAT: | 21 % |
Availability: | In stock |
Total stock: | 30 pcs |
Marking manufacturer: | MSC025SMA120S |
Central warehouse: | 30 pcs |
Unit:: | pcs |
Overview of volume discounts | Quantity (pcs) | Price without VAT | Price with VAT | |
1 + | 48,562628 € | 58,760780 € | ||
5 + | 46,540452 € | 56,313947 € | ||
10 + | 41,047228 € | 49,667146 € | ||
25 + | 39,181520 € | 47,409639 € |
Marking manufacturer | MSC025SMA120S |
Type of component: | SiC MOSFET Tranzistor |
Kategorie | Full SiC (MOS-BD) |
Configuration: | single 1*(T-BD) |
Specification: | SiC N-Channel MOSFET |
Construction: | 1*FET-BD |
Case type: | SMD |
Case [inch] : | TO-268AA |
Type of material: | SiC Full |
RoHS | Yes |
REACH | No |
NOVINKA | A |
RoHS1 | Ano |
Unit: | pcs |
Weight: | 4.2 [g] |
Type of packaging: | TUBE |
Small package (Number of units): | 30 |
Udc (URRM, UCEO, Umax) | 1200 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
Idc max (Tc/Ta=100÷109°C) | 63 [A] |
Pmax with heatsink (TC=25°C) | 370 [W] |
Input Logic Level (UGS level) | 20V |
trr recovery time (If=Inom.,@25°C) | 90 [ns] |
tr (Turn-on / rise time) | 14 [ns] |
tf/tq (Turn-off / fall time) | 18 [ns] |
Qg (Total Gate Charge) | 232 [nC] |
Cin (Input Capacitance) | 3020 [pF] |
Dimensions (L*W*H) [mm]: | TO-268 |
Tmin (minimum working temperature) | -55 [°C] |
Tmax (maximum working temperature) | 175 [°C] |
Rth-c (thermal resistance) | 0.27 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |
Rthjc1 IGBT | 0.41 [°C/W] |
RM - Pitch pins | 5.45 [mm] |
L - Length | 15 [mm] |
W - Width | 16 [mm] |
H - Height | 5 [mm] |
Dimensions of outlets | 1,32 [mm] |
Lv - Length of outlets | 3.81 [mm] |
Alternative products 1: | C3M0032120J1 |