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MSC080SMA330B4

Power MOSFET N-CH SiC 3300V 41A 4-Pin(4+Tab) TO-247

pcs
ID Code:189241
Manufacturer:Microchip Technology
Price with VAT : 189,748807 €
Price without VAT : 156,817196 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSC080SMA330B4
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 156,817196 €189,748807 €
5 + 150,284362 €181,844078 €
10 + 132,567541 €160,406725 €
25 + 126,541511 €153,115228 €


Basic information:

Marking manufacturerMSC080SMA330B4 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:single 1*(T-BD) 
Specification:SiC N-Channel MOSFET 
Construction:1*FET-BD 
Case type:THT 
Case [inch] :TO-247AD_4 
Type of material:SiC Full 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:7.2 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 3300 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)26 [A]
Pmax with heatsink (TC=25°C)381 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)25 [ns]
tf/tq (Turn-off / fall time)32 [ns]
Qg (Total Gate Charge)55 [nC]
Cin (Input Capacitance)3462 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:TO-247 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 1.8 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.33 [°C/W]
RM - Pitch pins2.54 [mm]
D - Outer diameter 3.6 [mm]
L - Length 21 [mm]
W - Width 15.9 [mm]
H - Height [mm]
Dimensions of outlets1,33 [mm]
Lv - Length of outlets19.81 [mm]

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