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MSCDC200A120D1PAG

Phase Leg SiC Diodes Power Module 1200V/200A D1P

pcs
ID Code:188074
Manufacturer:Microchip Technology
Price with VAT : 371,5285 €
Price without VAT : 307,0484 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCDC200A120D1PAG
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 307,0484 €371,5285 €
5 + 294,2534 €356,0466 €
10 + 281,4596 €340,5661 €
25 + 268,6663 €325,0862 €


Basic information:

Marking manufacturerMSCDC200A120D1PAG 
Type of component:Diode Schottky SiC 
KategorieDiode Schottky Modul 
Configuration:serie 2D 
Number of circuits (in case) 2 ks
Type of material:SiC 
Gap (by product number) 999.99 [mm]
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:!_d1p_! 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:192 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)200 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=90÷99°C)200 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)800 [µA]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.16 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

W - Width 33.8 [mm]
L - Length 94 [mm]
H - Height 17 [mm]
Rozměry/Velikost (LxWxH)94x34x17 [mm]

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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