Czech Republic (čeština) English Germany (Deutsch) Austria (Deutsch) Switzerland (Deutsch) Slovak Republic (slovenčina) Hungary (magyar) Romania (Română) France (français) Italy (italiano) Poland (polski) Estonia (eesti keel) Russia (pусский) Spain (español) Slovenia (slovenščina) Croatia (hrvatski) Bulgaria (български)
Your cart is currently empty

MSCDC50H1201AG

SiC Schottky 1 Phase Bridge 1200V/ 50A

Image:
Click to enlarge
MSCDC50H1201AG Microsemi / Microchip Technology
MSCDC50H1201AG Microsemi / Microchip Technology
pcs
ID Code:186159
Manufacturer:Microsemi / Microchip Technology
Price with VAT : 126,4158 €
Price without VAT : 104,4759 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCDC50H1201AG
Central warehouse Zdice: 0 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 104,4759 €126,4158 €
5 + 100,1356 €121,1641 €
10 + 95,7954 €115,9124 €
25 + 91,4164 €110,6138 €
SiC Schottky 1 Phase Bridge 1200V/ 50A
Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF, Low stray inductance, High junction temperature operation, Outstanding performance at high frequency operation, Low losses and Low EMI noises, Very rugged and easy mount, Direct mounting to heatsink (isolated package), Low junction to case thermal resistance, Easy paralleling due to positive TC of VF.
Appl. :Switch mode power supplies rectifier, Welding equipment, High speed rectifier, Induction heating,

Basic information:

Marking manufacturerMSCDC50H1201AG 
Type of casing:MODUL 
Case:!_modul-sp1f_! 
Number of circuits (in case) 4 ks
Type of material:!_sic full_! 
Gap (by product number) 999.99 [mm]
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:80 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)50 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

IF(AV) (Tc/Ta=120÷129°C)50 [A]
Uisol (@25°C/1min/50Hz)400 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)200 [µA]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.56 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Dimensions of outlets0.00 [mm]

Related items - MSCDC50H1201AG

I+SOT227Uni-25,4x38,2=005W-AL I+SOT227Uni-25,4x38,2=005W-AL   Thermally Conductive Pad for insulated Packages SOT-227, ISOTOP and in size 25,4x38,1 mm
ID: 181709   Mfr.no.: F05-AL2-25,4x38,2mm-Uni  
Quantity [pcs]1+10+50+100+
EUR/pcs0,69750,65880,62000,5425
Total stock: 2361
Manufacturer: -  
RoHS
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

Your question MSCDC50H1201AG

Your name, surname, company:*
Your email:*
Your phone number:*
Your question:*
Please rewrite code:* antispam
     More information

!_poslete odkaz svemu znamenu_!

Your name
Your email
e-mail your friend
Please rewrite code from the image antispam

In the provision of services help us to cookies. By using our services you consent to our use of cookies.   More information