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SiC Diode 3 Phase Bridge Power Module 1200V/ 50A SP1

ID Code:188059
Manufacturer:Microchip Technology
Price with VAT : 192,123924 €
Price without VAT : 158,780103 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCDC50X1201AG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 158,780103 €192,123925 €
5 + 152,165022 €184,119677 €
10 + 145,549151 €176,114473 €
25 + 138,933281 €168,109270 €

Basic information:

Marking manufacturerMSCDC50X1201AG 
Factory Lead Time42wk-49wk [wk]
Type of component:Bridge 3f Uncontrolled 
KategorieBridge Schottky SiC 
Configuration:Bridge 3f 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :SP1F 
Type of material:SiC 

Packaging and weight:

Weight:96 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)50 [A]
Idc max (Tc/Ta=100÷109°C)50 [A]
IF(AV) (Tc/Ta=120÷129°C)35 [A]
IF(AV) (Tc/Ta=130÷139°C)30 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)200 [µA]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:52x43x12 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.56 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

RM - Pitch pins3.8 [mm]
RM1 - Spacing of rows 38 [mm]
L - Length 51.6 [mm]
W - Width 42.5 [mm]
H - Height 12 [mm]
Dimensions of outlets1,4 [mm]
Lv - Length of outlets5.8 [mm]

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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