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MSCSM120AM027CD3AG
MOSFET 1200V Full SiC MOS + SIC Diode
| ID Code: | 185288 |
| Manufacturer: | Microchip Technology |
| Price with VAT : | 2 057,838778 € |
| Price without VAT : | 1 700,693205 € |
| VAT: | 21 % |
| Availability: | on request |
| Total stock: | 0 pcs |
| Marking manufacturer: | MSCSM120AM027CD3AG |
| Central warehouse Zdice: | 0 pcs |
| Unit:: | pcs |
| Overview of volume discounts | Quantity (pcs) | Price without VAT | Price with VAT | |
| 1 + | 1 700,693205 € | 2 057,838778 € | ||
| 5 + | 1 629,831096 € | 1 972,095626 € | ||
| 10 + | 1 558,968987 € | 1 886,352474 € | ||
| 25 + | 1 488,106447 € | 1 800,608800 € |
MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
Basic information:
| Marking manufacturer | MSCSM120AM027CD3AG |
| Type of component: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Half Bridge 1*(Phase Leg) |
| Specification: | !_sic n-channel mosfet_! |
| Construction: | 2*FET-BD+2*D |
| Type of material: | SiC Full |
| RoHS | Yes |
| REACH | No |
| Type of casing: | MODUL |
| Case: | !_d3_! |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Packaging and weight:
| Unit: | pcs |
| Weight: | 420 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 6 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 1200 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 733 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 733 [A] |
| Idc max (Tc/Ta=80÷89°C) | 584 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| IR (reverse current) | 1800 [µA] |
| Pmax with heatsink (TC=25°C) | 2970 [W] |
| Input Logic Level (UGS level) | 20V |
| RDS (on) 10V (UGS=10÷15V) | 3.5 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf/tq (Turn-off / fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 2088 [nC] |
| Cin (Input Capacitance) | 27000 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 175 [°C] |
| Rth-c (thermal resistance) | 0.075 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |
| Rthjc1 IGBT | 0.07 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| W - Width | 62 [mm] |
| L - Length | 108 [mm] |
| H - Height | 31 [mm] |
| Rozměry/Velikost (LxWxH) | 108x62x31 [mm] |
Alternatives and replacements
| Alternative 1: | 180902 - CAS120M12BM2 (WOL) |
| Alternative 2: | 174576 - SKM350MB120SCH17 (SMK) |
| Alternative products 1: | MD400HFR120C2S |
| Alternative products 2: | FF2MR12KM1 |
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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.