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MOSFET 1200V Full SiC MOS + SIC Diode

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MSCSM120AM027CT6AG Microsemi / Microchip Technology
MSCSM120AM027CT6AG Microsemi / Microchip Technology
ID Code:185287
Manufacturer:Microsemi / Microchip Technology
Price with VAT : 1 334,7275 €
Price without VAT : 1 103,0806 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120AM027CT6AG
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 1 103,0806 €1 334,7275 €
3 + 1 013,2079 €1 225,9816 €
MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M5 power connectors
. Internal thermistor for temperature monitoring
. Aluminum nitride (AlN) substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120AM027CT6AG 
Type of casing:MODUL 
KategorieFull SiC (MOS+D) 
Type of component:!_n-mosfet_! 
Configuration:Half Bridge 

Electrical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)733 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)733 [A]
Idc max (Tc/Ta=80÷89°C)584 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)1800 [µA]
Pmax with heatsink (TC=25°C)2970 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)3.5 [mΩ]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)55 [ns]
tf/tq (Turn-off / fall time)67 [ns]
fmax max.frequency (max./typ.)0.06 [MHz] ?

fmax - definitions for components

fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)2088 [nC]
Cin (Input Capacitance)27000 [pF]

Material, color, design:

Type of material:!_sic full_! 
Material BaseCu 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.07 [°C/W]
Rthjc2 Dioda, Tyristor0.175 [°C/W]


Dimensions of outlets0.00 [mm]

Packaging and weight:

Weight:350 [g]
Packaging (Number of units):

Alternatives and replacements

Alternative products 1:MD400HFR120B3S 

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