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MSCSM120AM03CT6LIAG

MOSFET 1200V Full SiC MOS + SiC Diode

pcs
ID Code:185252
Manufacturer:Microchip Technology
Price with VAT : 1 805,3426 €
Price without VAT : 1 492,0186 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120AM03CT6LIAG
Central warehouse Zdice: 0 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 1 492,0186 €1 805,3426 €
5 + 1 429,8525 €1 730,1215 €
10 + 1 367,6846 €1 654,8984 €
25 + 1 305,5172 €1 579,6758 €
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM03CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120AM03CT6LIAG 
KategorieFull SiC (MOS-BD+D) 
Type of component:SiC MOSFET-BD+SiC Schottky D 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:!_sic n-channel mosfet_! 
Construction:2*FET-BD+2*D 
Type of material:!_sic full_! 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:!_sp6li_! 
NOVINKA
RoHS1Ano 
UL94V-0 

Packaging and weight:

Unit:pcs 
Weight:350 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)805 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)805 [A]
Idc max (Tc/Ta=80÷89°C)640 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)1200 [µA]
Pmax with heatsink (TC=25°C)3215 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)3.1 [mΩ]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)55 [ns]
tf/tq (Turn-off / fall time)67 [ns]
Qg (Total Gate Charge)2320 [nC]
Cin (Input Capacitance)30200 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.047 [°C/W]
Rthjc2 Dioda, Tyristor0.126 [°C/W]
W - Width 62 [mm]
L - Length 108 [mm]
H - Height 22 [mm]
Rozměry/Velikost (LxWxH)108x62x22 [mm]

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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