MOSFET 1200V Full SiC MOS + SiC Diode
ID Code: | 185959 |
Manufacturer: | Microchip Technology |
Price with VAT : | 1 272,9777 € |
Price without VAT : | 1 052,0476 € |
VAT: | 21 % |
Availability: | on request |
Total stock: | 0 pcs |
Marking manufacturer: | MSCSM120AM042CT6LIAG |
Unit:: | pcs |
quantity discounts | Quantity | Price without VAT | Price with VAT | |
1 + | 1 052,0476 € | 1 272,9777 € | ||
5 + | 1 008,2136 € | 1 219,9385 € | ||
10 + | 964,3779 € | 1 166,8973 € | ||
25 + | 920,5426 € | 1 113,8566 € |
Marking manufacturer | MSCSM120AM042CT6LIAG |
Type of component: | SiC MOSFET Tranzistor |
Kategorie | Full SiC (MOS-BD+D) |
Configuration: | Half Bridge 1*(Phase Leg) |
Specification: | !_sic n-channel mosfet_! |
Construction: | 2*FET-BD+2*D |
Type of material: | !_sic full_! |
RoHS | Yes |
REACH | No |
Type of casing: | MODUL |
Case: | !_sp6li_! |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Unit: | pcs |
Weight: | 350 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 6 |
Udc (URRM, UCEO, Umax) | 1200 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
Idc max (Tc/Ta=25÷160°C) | 495 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
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Idc max (Tc/Ta=25°C) | 495 [A] |
Idc max (Tc/Ta=80÷89°C) | 395 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
IR (reverse current) | 1200 [µA] |
Pmax with heatsink (TC=25°C) | 2031 [W] |
Input Logic Level (UGS level) | 20V |
RDS (on) 10V (UGS=10÷15V) | 5.2 [mΩ] |
trr recovery time (If=Inom.,@25°C) | 90 [ns] |
tr (Turn-on / rise time) | 55 [ns] |
tf/tq (Turn-off / fall time) | 67 [ns] |
Qg (Total Gate Charge) | 1392 [nC] |
Cin (Input Capacitance) | 18100 [pF] |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 175 [°C] |
Rth-c (thermal resistance) | 0.075 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |
Rthjc1 IGBT | 0.074 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
W - Width | 62 [mm] |
L - Length | 108 [mm] |
H - Height | 22 [mm] |
Rozměry/Velikost (LxWxH) | 108x62x22 [mm] |
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