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MSCSM120AM042CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
| ID Code: | 185959 |
| Manufacturer: | Microchip Technology |
| Price with VAT : | 1 272,9777 € |
| Price without VAT : | 1 052,0476 € |
| VAT: | 21 % |
| Availability: | on request |
| Total stock: | 0 pcs |
| Marking manufacturer: | MSCSM120AM042CT6LIAG |
| Unit:: | pcs |
| quantity discounts | Quantity | Price without VAT | Price with VAT | |
| 1 + | 1 052,0476 € | 1 272,9777 € | ||
| 5 + | 1 008,2136 € | 1 219,9385 € | ||
| 10 + | 964,3779 € | 1 166,8973 € | ||
| 25 + | 920,5426 € | 1 113,8566 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Basic information:
| Marking manufacturer | MSCSM120AM042CT6LIAG |
| Type of component: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Half Bridge 1*(Phase Leg) |
| Specification: | !_sic n-channel mosfet_! |
| Construction: | 2*FET-BD+2*D |
| Type of material: | !_sic full_! |
| RoHS | Yes |
| REACH | No |
| Type of casing: | MODUL |
| Case: | !_sp6li_! |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Packaging and weight:
| Unit: | pcs |
| Weight: | 350 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 6 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 1200 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 495 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 495 [A] |
| Idc max (Tc/Ta=80÷89°C) | 395 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| IR (reverse current) | 1200 [µA] |
| Pmax with heatsink (TC=25°C) | 2031 [W] |
| Input Logic Level (UGS level) | 20V |
| RDS (on) 10V (UGS=10÷15V) | 5.2 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf/tq (Turn-off / fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 1392 [nC] |
| Cin (Input Capacitance) | 18100 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 175 [°C] |
| Rth-c (thermal resistance) | 0.075 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |
| Rthjc1 IGBT | 0.074 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| W - Width | 62 [mm] |
| L - Length | 108 [mm] |
| H - Height | 22 [mm] |
| Rozměry/Velikost (LxWxH) | 108x62x22 [mm] |
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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.