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MSCSM120AM083CD3AG

Phase Leg Sic Mosfet Power Module 1200V, 251A, Module-D3

No longer in stock
ID Code:189254
Manufacturer:Microchip Technology
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120AM083CD3AG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT


Basic information:

Marking manufacturerMSCSM120AM083CD3AG 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:SiC N-Channel MOSFET 
Construction:2*FET-BD+2*D 
Case type:Modul 
Case [inch] :D3 
Type of material:SiC Full 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 
UL94V-0 

Packaging and weight:

Unit:pcs 
Weight:420 [g]
Type of packaging:BOX 
Small package (Number of units):12 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)200 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)600 [µA]
Pmax with heatsink (TC=25°C)1042 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)55 [ns]
tf/tq (Turn-off / fall time)67 [ns]
Qg (Total Gate Charge)696 [nC]
Cin (Input Capacitance)9000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:108x62x31 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.144 [°C/W]
Rthjc2 Dioda, Tyristor0.34 [°C/W]
L - Length 108 [mm]
W - Width 62 [mm]
H - Height 31 [mm]

Alternatives and replacements

Alternative products 1:CAS300M12BM2 

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