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MSCSM120AM16CT1AG

Full SiC MOSFET 1200V / 138A

pcs
ID Code:186151
Manufacturer:Microchip Technology
Price with VAT : 297,6639 €
Price without VAT : 246,0033 €
VAT:21 %
Availability:In stock
Total stock:4 pcs
Marking manufacturer: MSCSM120AM16CT1AG
Central warehouse Zdice: 4 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 246,0033 €297,6639 €
5 + 235,7524 €285,2605 €
10 + 225,5024 €272,8580 €
25 + 215,2520 €260,4550 €
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120AM16CT1AG 
KategorieFull SiC (MOS+D) 
Type of component:!_sic mosfet+sic schottky diode_! 
Configuration:Half Bridge 
Construction:!_2*fet+2*d_! 
Type of material:!_sic_! 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:!_modul-sp1f_! 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:80 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)173 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)173 [A]
Idc max (Tc/Ta=80÷89°C)138 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)745 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)16 [mΩ]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)464 [nC]
Cin (Input Capacitance)6040 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.2 [°C/W]
Rthjc2 Dioda, Tyristor0.477 [°C/W]
W - Width 41 [mm]
L - Length 52 [mm]
H - Height 18 [mm]
Dimensions of outlets0.00 [mm]

Alternatives and replacements

Alternative products 1:CAB011M12FM3 

!_potrebujete poradit ?_! MSCSM120AM16CT1AG Microchip Technology

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