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MSCSM120AM16CT1AG

Full SiC MOSFET 1200V / 138A

pcs
ID Code:186151
Manufacturer:Microchip Technology
Price with VAT : 318,366653 €
Price without VAT : 263,112936 €
VAT:21 %
Availability:In stock
Total stock:4 pcs
Marking manufacturer: MSCSM120AM16CT1AG
Central warehouse: 4 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 263,112936 €318,366653 €
5 + 252,151951 €305,103861 €
10 + 241,188501 €291,838086 €
25 + 230,225462 €278,572809 €
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120AM16CT1AG 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:SiC N-Channel MOSFET 
Construction:2*FET-BD+2*D 
Case type:Modul 
Case [inch] :SP1F 
Type of material:SiC Full 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:96 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)138 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)745 [W]
Input Logic Level (UGS level)20V 
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)464 [nC]
Cin (Input Capacitance)6040 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:52x43x12 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.2 [°C/W]
Rthjc2 Dioda, Tyristor0.477 [°C/W]
RM - Pitch pins3.8 [mm]
RM1 - Spacing of rows 38 [mm]
L - Length 51.6 [mm]
W - Width 42.5 [mm]
H - Height 12 [mm]
Dimensions of outlets1,4 [mm]
Lv - Length of outlets5.8 [mm]

Alternatives and replacements

Alternative products 1:CAB011M12FM3 

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