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Full Bridge Sic Mosfet Power Module 1200V, 251A, Module-SP6C

ID Code:189179
Manufacturer:Microchip Technology
Price with VAT : 1 327,2489 €
Price without VAT : 1 096,8999 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120HM083CAG
Central warehouse Zdice: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 1 096,8999 €1 327,2489 €
5 + 1 051,1957 €1 271,9467 €
10 + 1 005,4918 €1 216,6451 €
25 + 959,7875 €1 161,3429 €

Basic information:

Marking manufacturerMSCSM120HM083CAG 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Bridge 1f 
Specification:!_sic n-channel mosfet_! 
Type of material:SiC Full 
Type of casing:MODUL 

Packaging and weight:

Weight:330 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)251 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)251 [A]
Idc max (Tc/Ta=80÷89°C)200 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)600 [µA]
Pmax with heatsink (TC=25°C)1042 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)10.4 [mΩ]
tr (Turn-on / rise time)55 [ns]
tf/tq (Turn-off / fall time)67 [ns]
Qg (Total Gate Charge)696 [nC]
Cin (Input Capacitance)9000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.144 [°C/W]
Rthjc2 Dioda, Tyristor0.34 [°C/W]
RM - Pitch pins[mm]
Number of Pins 12 
W - Width 62 [mm]
L - Length 108 [mm]
H - Height 17 [mm]
Rozměry/Velikost (LxWxH)108x62x17 [mm]
Dimensions of outlets2,8 [mm]
Lv - Length of outlets[mm]

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