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SiC Mosfet Power Module 1200V 150A 560W Case BL3

ID Code:189856
Manufacturer:Microchip Technology
Price with VAT : 841,985371 €
Price without VAT : 695,855678 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120HM16CTBL3NG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 695,855678 €841,985370 €
5 + 666,861987 €806,903004 €
10 + 637,868297 €771,820639 €
25 + 608,874211 €736,737795 €

Basic information:

Marking manufacturerMSCSM120HM16CTBL3NG 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Bridge 1f 
Specification:SiC N-Channel MOSFET 
Case type:Modul 
Case [inch] :BL3 
Type of material:SiC Full 

Packaging and weight:

Weight:39 [g]
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)120 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)20 [µA]
Pmax with heatsink (TC=25°C)560 [W]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)464 [nC]
Cin (Input Capacitance)6040 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:48x53x9 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.268 [°C/W]
Rthjc2 Dioda, Tyristor0.45 [°C/W]
L - Length 47.5 [mm]
W - Width 52.6 [mm]
H - Height 9.3 [mm]
Lv - Length of outlets5.8 [mm]

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