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SiC Mosfet Power Module 1200V 79A 310W Case BL2

ID Code:189855
Manufacturer:Microchip Technology
Price with VAT : 464,2950 €
Price without VAT : 383,7149 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120HM31CTBL2NG
Central warehouse Zdice: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 383,7149 €464,2950 €
5 + 367,7268 €444,9494 €
10 + 351,7387 €425,6038 €
25 + 335,7505 €406,2582 €

Basic information:

Marking manufacturerMSCSM120HM31CTBL2NG 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Bridge 1f 
Specification:!_sic n-channel mosfet_! 
Type of material:SiC Full 
Type of casing:MODUL 

Packaging and weight:

Weight:25.8 [g]
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)79 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)79 [A]
Idc max (Tc/Ta=80÷89°C)63 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)10 [µA]
Pmax with heatsink (TC=25°C)310 [W]
RDS (on) 10V (UGS=10÷15V)31 [mΩ]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)232 [nC]
Cin (Input Capacitance)3020 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.483 [°C/W]
Rthjc2 Dioda, Tyristor0.854 [°C/W]
W - Width 35.7 [mm]
L - Length 43.6 [mm]
H - Height 9.3 [mm]
Rozměry/Velikost (LxWxH)44x36x9 [mm]
Lv - Length of outlets5.8 [mm]

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