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SiC Mosfet Power Module 1200V 79A 310W Case BL1

ID Code:189851
Manufacturer:Microchip Technology
Price with VAT : 163,458568 €
Price without VAT : 135,089726 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120SKM31CTBL1NG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 135,089726 €163,458568 €
5 + 129,460461 €156,647158 €
10 + 123,831591 €149,836225 €
25 + 118,203116 €143,025770 €

Basic information:

Marking manufacturerMSCSM120SKM31CTBL1NG 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:High side 1*(Buck Chopper) 
Specification:SiC N-Channel MOSFET 
Case type:Modul 
Case [inch] :BL1 
Type of material:SiC Full 

Packaging and weight:

Weight:16.2 [g]
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)63 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)10 [µA]
Pmax with heatsink (TC=25°C)310 [W]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)232 [nC]
Cin (Input Capacitance)3020 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:40x26x9 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.483 [°C/W]
Rthjc2 Dioda, Tyristor0.635 [°C/W]
L - Length 40.3 [mm]
W - Width 25.6 [mm]
H - Height 9.3 [mm]
Lv - Length of outlets5.8 [mm]

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