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Triple Phase Leg Sic Mosfet Power Module

ID Code:187807
Manufacturer:Microchip Technology
Price with VAT : 1 671,5302 €
Price without VAT : 1 381,4299 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120TAM11CTPAG
Central warehouse Zdice: 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 1 381,4299 €1 671,5302 €
5 + 1 323,8693 €1 601,8818 €
10 + 1 266,3099 €1 532,2349 €
25 + 1 208,7500 €1 462,5875 €
SP6-P package
• Replaces up to six SOT-227 parts
• Height compatible with SOT-227
• Low-inductance solder pins
• High current capability

Basic information:

Marking manufacturerMSCSM120TAM11CTPAG 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Half Bridge 3*(Phase Leg) 
Specification:!_sic n-channel mosfet_! 
Type of material:SiC Full 
Type of casing:MODUL 

Packaging and weight:

Weight:275 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)251 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)251 [A]
Idc max (Tc/Ta=80÷89°C)200 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)[VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)1042 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)10.4 [mΩ]
trr recovery time (If=Inom.,@25°C)90 [ns]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)696 [nC]
Cin (Input Capacitance)9060 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.144 [°C/W]
Rthjc2 Dioda, Tyristor0.573 [°C/W]
RM - Pitch pins2.54 [mm]
W - Width 62 [mm]
L - Length 108 [mm]
H - Height 11.5 [mm]
Rozměry/Velikost (LxWxH)108x62x11 [mm]
Dimensions of outlets0.8 [mm]
Lv - Length of outlets5.6 [mm]

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