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SiC MOSFET 1200V / 71A SixPack

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MSCSM120TAM31CT3AG Microchip Technology - Microsemi
MSCSM120TAM31CT3AG Microchip Technology - Microsemi
ID Code:186279
Manufacturer:Microchip Technology - Microsemi
Price with VAT : 476,1118 €
Price without VAT : 393,4808 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM120TAM31CT3AG
Central warehouse Zdice: 0 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 393,4808 €476,1118 €
5 + 377,0842 €456,2718 €
10 + 360,6875 €436,4318 €
25 + 344,2908 €416,5919 €
SiC MOSFET 1200V / 71A SixPack
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance

Basic information:

Marking manufacturerMSCSM120TAM31CT3AG 
Type of casing:MODUL 
KategorieFull SiC (MOS+D) 
Type of component:!_n-mosfet_! 
Type of material:!_sic full_! 
Material BaseCu+AlN 

Packaging and weight:

Weight:110 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)89 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)89 [A]
Idc max (Tc/Ta=80÷89°C)71 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)395 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)31 [mΩ]
tr (Turn-on / rise time)30 [ns]
tf/tq (Turn-off / fall time)25 [ns]
fmax max.frequency (max./typ.)0.08 [MHz] ?

fmax - definitions for components

fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)232 [nC]
Cin (Input Capacitance)3020 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.38 [°C/W]
Rthjc2 Dioda, Tyristor0.9 [°C/W]
Dimensions of outlets0.00 [mm]

Alternatives and replacements

Alternative 1:183781 - CCS050M12CM2 (CRE) 
Alternative products 1:CCB032M12FM3 

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