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MSCSM120TAM31CT3AG
SiC MOSFET 1200V / 71A SixPack
| ID Code: | 186279 |
| Manufacturer: | Microchip Technology |
| Price with VAT : | 600,274049 € |
| Price without VAT : | 496,094255 € |
| VAT: | 21 % |
| Availability: | on request |
| Total stock: | 0 pcs |
| Marking manufacturer: | MSCSM120TAM31CT3AG |
| Central warehouse Zdice: | 0 pcs |
| Unit:: | pcs |
| Overview of volume discounts | Quantity (pcs) | Price without VAT | Price with VAT | |
| 1 + | 496,094255 € | 600,274049 € | ||
| 5 + | 475,423553 € | 575,262500 € | ||
| 10 + | 454,753283 € | 550,251472 € | ||
| 25 + | 434,082581 € | 525,239923 € |
SiC MOSFET 1200V / 71A SixPack
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
Basic information:
| Marking manufacturer | MSCSM120TAM31CT3AG |
| Type of component: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | Bridge 3f |
| Specification: | !_sic n-channel mosfet_! |
| Construction: | 6*FET-BD+6*D |
| Type of material: | SiC Full |
| RoHS | Yes |
| REACH | No |
| Type of casing: | MODUL |
| Case: | !_sp3f_! |
| NOVINKA | A |
| RoHS1 | Ano |
Packaging and weight:
| Unit: | pcs |
| Weight: | 125 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 3300 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 1200 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 89 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 89 [A] |
| Idc max (Tc/Ta=80÷89°C) | 71 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| Pmax with heatsink (TC=25°C) | 395 [W] |
| Input Logic Level (UGS level) | 20V |
| RDS (on) 10V (UGS=10÷15V) | 31 [mΩ] |
| tr (Turn-on / rise time) | 30 [ns] |
| tf/tq (Turn-off / fall time) | 25 [ns] |
| Qg (Total Gate Charge) | 232 [nC] |
| Cin (Input Capacitance) | 3020 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 125 [°C] |
| Rth-c (thermal resistance) | 0.075 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |
| Rthjc1 IGBT | 0.38 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.9 [°C/W] |
| RM - Pitch pins | 3.81 [mm] |
| RM1 - Spacing of rows | 38 [mm] |
| W - Width | 42.5 [mm] |
| L - Length | 73.4 [mm] |
| H - Height | 12 [mm] |
| Rozměry/Velikost (LxWxH) | 73x43x12 [mm] |
| Dimensions of outlets | 1,35 [mm] |
| Lv - Length of outlets | 5.3 [mm] |
Alternatives and replacements
| Alternative 1: | 183781 - CCS050M12CM2 (CRE) |
| Alternative products 1: | CCB032M12FM3 |