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MOSFET 1700V Full SiC MOS + SiC Diode

ID Code:186731
Manufacturer:Microchip Technology
Price with VAT : 2 520,646294 €
Price without VAT : 2 083,178755 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM170AM029CT6LIAG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 2 083,178755 €2 520,646294 €
5 + 1 996,378121 €2 415,617526 €
10 + 1 909,579073 €2 310,590678 €
25 + 1 822,780024 €2 205,563829 €

Basic information:

Marking manufacturerMSCSM170AM029CT6LIAG 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:SiC N-Channel MOSFET 
Case type:Modul 
Case [inch] :SP6LI 
Type of material:SiC Full 

Packaging and weight:

Weight:350 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1700 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)538 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
Pmax with heatsink (TC=25°C)3000 [W]
Input Logic Level (UGS level)20V 
trr recovery time (If=Inom.,@25°C)27 [ns]
tr (Turn-on / rise time)63 [ns]
tf/tq (Turn-off / fall time)48 [ns]
Qg (Total Gate Charge)2136 [nC]
Cin (Input Capacitance)39600 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:108x62x22 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.075 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.05 [°C/W]
Rthjc2 Dioda, Tyristor0.062 [°C/W]
L - Length 108 [mm]
W - Width 62 [mm]
H - Height 22 [mm]

Alternatives and replacements

Alternative 1:186152 - MSCMC170AM08CT6LIAG (MCH) 

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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