MSCSM170AM058CT6LIAG

MOSFET 1700V Full SiC MOS + SiC Diode

Image:

Click to enlarge

MSCSM170AM058CT6LIAG Microchip Technology

MSCSM170AM058CT6LIAG_Ms.pdf

SiC_Brochure_Ms.pdf

Power Management_MCH.pdf

ID Code:	186277
Manufacturer:	Microchip Technology
Price with VAT :	1 689,3057 €
Price without VAT :	1 396,1204 €
VAT:	21 %
Availability:	on request

Total stock:	0 pcs
Marking manufacturer:	MSCSM170AM058CT6LIAG
Central warehouse Zdice:	0 pcs
Unit::	pcs

Overview of volume discounts
Quantity (pcs)	Price without VAT		Price with VAT
1 +		1 396,1204 €		1 689,3057 €
5 +		1 337,9489 €		1 618,9182 €
10 +		1 279,7770 €		1 548,5302 €
25 +		1 221,6055 €		1 478,1427 €

MOSFET 1700V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM170AM058CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance

Basic information:

Marking manufacturer	MSCSM170AM058CT6LIAG
Type of component:	SiC MOSFET Tranzistor
Kategorie	Full SiC (MOS-BD+D)
Configuration:	Half Bridge 1*(Phase Leg)
Specification:	!_sic n-channel mosfet_!
Construction:	2FET-BD+2D
Type of material:	SiC Full
RoHS	Yes
REACH	No
Type of casing:	MODUL
Case:	!_sp6li_!
NOVINKA	A
RoHS1	Ano
UL94	V-0

Packaging and weight:

Unit:	pcs
Weight:	350 [g]
Type of packaging:	BOX
Small package (Number of units):	1

Electro-physical parameters:

U_dc (U_RRM, U_CEO, U_max)	1700 [V] ? U_dc - definitions for components U_dc= U_RRM - Diode U_dc= U_DRM , U_RRM - Thyristor U_dc= U_CEO - Transistors U_dc= U_max -
I_dc_max (Tc/Ta=25÷160°C)	353 [A] ? Current at the lowest temperature. The specifications in the datasheet. I_dc=I_{F (AV)} - Diode I_dc=I_{T (AV)} - Thyristor I_dc=I_{C max} - BJT, IGBT I_dc=I_{D max} - Transistor: FET
I_{dc max} (Tc/Ta=25°C)	353 [A]
I_{dc max} (Tc/Ta=80÷89°C)	281 [A]
U_isol (@25°C/1min/50Hz)	4000 [V]
U_F (maximum forward voltage)	1.8 [V_DC] ? Test conditions: T_a=25°C, I_F=I_n/I_max
I_R (reverse current)	3000 [µA]
P_max with heatsink (T_C=25°C)	1642 [W]
Input Logic Level (U_GS level)	20V
R_{DS (on)} 10V (U_GS=10÷15V)	7.5 [mΩ]
t_rr recovery time (If=Inom.,@25°C)	27 [ns]
t_r (Turn-on / rise time)	48 [ns]
t_f/t_q (Turn-off / fall time)	30 [ns]
Q_g (Total Gate Charge)	1068 [nC]
C_in (Input Capacitance)	19800 [pF]

Thermal and mechanical parameters:

T_min (minimum working temperature)	-40 [°C]
T_max (maximum working temperature)	175 [°C]
R_th-c (thermal resistance)	0.075 [°C/W] ? R_th-c - definitions for different components R_th-c= R_thjc per whole case R_th-c- foil surface inch²
Rthjc1 IGBT	0.09 [°C/W]
Rthjc2 Dioda, Tyristor	0.1 [°C/W]
W - Width	62 [mm]
L - Length	108 [mm]
H - Height	22 [mm]
Rozměry/Velikost (LxWxH)	108x62x22 [mm]

Alternatives and replacements

Alternative 1:

186152 - MSCMC170AM08CT6LIAG (MCH)

Related items - MSCSM170AM058CT6LIAG

	I+case 62x106_F05-AL2 Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Mfr.no.: F05-AL2_62x106mm_SEMITRANS3	Ordered Manufacturer: SEMIC EU
	2ASC-17A1HP SiC Core Driver Core for SiC modules 1700V 2 x 5W / 2 x 20A, 150kHz ID: 183850 Mfr.no.: 2ASC-17A1HP	Total stock: 3 Manufacturer: Microchip Technology
	ASBK-014 PIC Programmer Assembly Kit - Agileswitch SiC Core driver ID: 185353 Mfr.no.: ASBK-014	Total stock: 1 Manufacturer: Microchip Technology
	ASBK-015 Device Hardware Kit - SP6LI ID: 185841 Mfr.no.: ASBK-015	on request Manufacturer: Microchip Technology
	SP6CA3-Adapter Board 2ASC-17A1HP SP6CA3 is the adapter board for SP6LI SiC modules Microsemi controlled by Core Driver 2ACS-17A1HP ID: 186260 Mfr.no.: SP6CA3	on request Manufacturer: Microchip Technology