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Full Bridge Sic Mosfet Power Module 1700V, 238A, Module-SP6C

ID Code:189222
Manufacturer:Microchip Technology
Price with VAT : 1 753,281879 €
Price without VAT : 1 448,993289 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: MSCSM170HM087CAG
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 1 448,993289 €1 753,281880 €
5 + 1 388,619029 €1 680,229025 €
10 + 1 328,243979 €1 607,175215 €
25 + 1 267,869325 €1 534,121883 €

Basic information:

Marking manufacturerMSCSM170HM087CAG 
Factory Lead Time42wk-49wk [wk]
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD+D) 
Configuration:Bridge 1f 
Specification:SiC N-Channel MOSFET 
Case type:Modul 
Case [inch] :SP6-41 
Type of material:SiC Full 

Packaging and weight:

Weight:330 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1700 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=80÷89°C)189 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)800 [µA]
Pmax with heatsink (TC=25°C)1114 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)75 [ns]
tf/tq (Turn-off / fall time)56 [ns]
Qg (Total Gate Charge)712 [nC]
Cin (Input Capacitance)13200 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:108x62x17 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.135 [°C/W]
Rthjc2 Dioda, Tyristor0.149 [°C/W]
RM - Pitch pins[mm]
Number of Pins 12 
L - Length 108 [mm]
W - Width 62 [mm]
H - Height 17 [mm]
Dimensions of outlets2,8 [mm]
Lv - Length of outlets[mm]

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