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MSCSM170SKM23CT1AG
Full SiC MOSFET 1700V / 98A - Buck chopper
| ID Code: | 186231 |
| Manufacturer: | Microchip Technology |
| Price with VAT : | 188,6512 € |
| Price without VAT : | 155,9101 € |
| VAT: | 21 % |
| Availability: | Ordered |
| Total stock: | 0 pcs |
| Marking manufacturer: | MSCSM170SKM23CT1AG |
| Central warehouse Zdice: | 0 pcs |
| Unit:: | pcs |
| Overview of volume discounts | Quantity (pcs) | Price without VAT | Price with VAT | |
| 1 + | 155,9101 € | 188,6512 € | ||
| 3 + | 153,7519 € | 186,0397 € | ||
| 5 + | 152,6727 € | 184,7340 € | ||
| 10 + | 151,5936 € | 183,4283 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Basic information:
| Marking manufacturer | MSCSM170SKM23CT1AG |
| Type of component: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuration: | High side 1*(Buck Chopper) |
| Specification: | !_sic n-channel mosfet_! |
| Construction: | 1*FET-BD+1*D |
| Type of material: | SiC Full |
| RoHS | Yes |
| REACH | No |
| Type of casing: | MODUL |
| Case: | !_sp1f_! |
| NOVINKA | A |
| RoHS1 | Ano |
Packaging and weight:
| Unit: | pcs |
| Weight: | 96 [g] |
| Type of packaging: | TUBE |
| Small package (Number of units): | 7 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 1700 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 124 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 124 [A] |
| Idc max (Tc/Ta=80÷89°C) | 98 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| Pmax with heatsink (TC=25°C) | 602 [W] |
| Input Logic Level (UGS level) | 20V |
| RDS (on) 10V (UGS=10÷15V) | 22.5 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 27 [ns] |
| tr (Turn-on / rise time) | 17 [ns] |
| tf/tq (Turn-off / fall time) | 19 [ns] |
| Qg (Total Gate Charge) | 356 [nC] |
| Cin (Input Capacitance) | 6600 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 150 [°C] |
| Rthjc1 IGBT | 0.25 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.276 [°C/W] |
| RM - Pitch pins | 3.8 [mm] |
| RM1 - Spacing of rows | 38 [mm] |
| W - Width | 42.5 [mm] |
| L - Length | 51.6 [mm] |
| H - Height | 12 [mm] |
| Rozměry/Velikost (LxWxH) | 52x43x12 [mm] |
| Dimensions of outlets | 1,4 [mm] |
| Lv - Length of outlets | 5.8 [mm] |