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S1104SXU30

Flat Base Rectifier Diode 3000V/860A, Anoda on Base

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S1104SXU30 Dynex Semiconductor
S1104SXU30 Dynex Semiconductor
S1104SXU30 Dynex Semiconductor
pcs
ID Code:183626
Manufacturer:Dynex Semiconductor
Price with VAT : 5 071,2490 €
Price without VAT : 4 191,1148 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: S1104SXU30
Central warehouse Zdice: 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 4 191,1148 €5 071,2490 €
3 + 4 086,3370 €4 944,4677 €
6 + 3 876,7812 €4 690,9053 €
12 + 3 562,4476 €4 310,5616 €
Flat Base Rectifier Diode 3000V/860A, Anoda on Base

Basic information:

Marking manufacturerS1104SXU30 
Type of component:Diode Standard 
KategorieDiode Standard Disc 
Configuration:single (1D) 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
Type of casing:PUK 
Case:!_puk-flatbase_! 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:835 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 3000 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)860 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=100÷109°C)860 [A]
UF (maximum forward voltage)1.23 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)50000 [µA]
I2t (TC/TA=25°C)1280 [1000*A2s]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.065 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

D - Outer diameter 52 [mm]
W - Width 60 [mm]
L - Length 126 [mm]
H - Height 73 [mm]

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