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Trans IGBT Module N-CH 1200V 1.11KA

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SEMiX603GB12E4p Semikron
SEMiX603GB12E4p Semikron
SEMiX603GB12E4p Semikron
ID Code:171772
Price with VAT : 675,533661 €
Price without VAT : 558,292282 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: SEMiX603GB12E4p
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 558,292282 €675,533661 €
6 + 226,806240 €274,435550 €
24 + 174,466338 €211,104269 €
96 + 162,274220 €196,351806 €
Trans IGBT Module N-CH 1200V 1.11KA

Basic information:

Marking manufacturerSEMiX603GB12E4p 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :SEMiX-3p 
Type of material:Si-Silicon 

Packaging and weight:

Weight:450 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)1100 [A]
Idc max (Tc/Ta=80÷89°C)853 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)2.08 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.8 [V]
tr (Turn-on / rise time)85 [ns]
tf/tq (Turn-off / fall time)145 [ns]
Qg (Total Gate Charge)3450 [nC]
Cin (Input Capacitance)37500 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:150x62x21 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.025 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 150 [mm]
W - Width 62 [mm]
H - Height 21 [mm]

Alternatives and replacements

Alternative products 1:FF600R12ME4 

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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