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MOSFET Modul 1200V, H-Bridge Full SiC

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SK45MH120TSCp Semikron
SK45MH120TSCp Semikron
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ID Code:173648
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: SK45MH120TSCp
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MOSFET Modul 1200V, H-Bridge Full SiC

Basic information:

Marking manufacturerSK45MH120TSCp 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:Bridge 1f 
Specification:!_sic n-channel mosfet_! 
Type of material:SiC Full 
Type of casing:MODUL 

Packaging and weight:

Weight:36 [g]
Small package (Number of units):15 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)40 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)40 [A]
Idc max (Tc/Ta=70÷79°C)33 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
Input Logic Level (UGS level)15V 
RDS (on) 10V (UGS=10÷15V)45 [mΩ]
trr recovery time (If=Inom.,@25°C)73 [ns]
tr (Turn-on / rise time)49 [ns]
tf/tq (Turn-off / fall time)13 [ns]
Qg (Total Gate Charge)206 [nC]
Cin (Input Capacitance)4310 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

W - Width 31 [mm]
L - Length 55 [mm]
H - Height 16 [mm]
Rozměry/Velikost (LxWxH)55x31x16 [mm]

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