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SK75GB12T4T

IGBT 1200V

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SK75GB12T4T Semikron
SK75GB12T4T Semikron
No longer in stock
ID Code:191221
Manufacturer:Semikron
Price: on request
VAT:21 %
Total stock:0 pcs
Marking manufacturer: SK75GB12T4T
Unit:: pcs
IGBT 1200V

Basic information:

Marking manufacturerSK75GB12T4T 
KategorieIGBT Full Silicon 
Configuration:Bridge 3f -SE(single emiter) 
Construction:6*(IGBT+D) 
Number of circuits (in case) 6 ks
Type of material:Si-Silicon 
Material BaseCeramic 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:SEMITOP-3 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:34 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)80 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)80 [A]
Idc max (Tc/Ta=70÷79°C)65 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)2.1 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.85 [V]
Input Logic Level (UGS level)15V 
Qg (Total Gate Charge)570 [nC]
Cin (Input Capacitance)4400 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.74 [°C/W]
Rthjc2 Dioda, Tyristor0.97 [°C/W]
W - Width 63 [mm]
L - Length 57 [mm]
H - Height 17 [mm]
Dimensions of outlets0.00 [mm]

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