SK75GB12T4T
IGBT 1200V
| ID Code: | 191221 |
| Manufacturer: | Semikron |
| Price: | on request |
| VAT: | 21 % |
| Availability: | In stock |
| Total stock: | 100 pcs |
| Marking manufacturer: | SK75GB12T4T |
| Central warehouse: | 100 pcs |
IGBT 1200V
Basic information:
| Marking manufacturer | SK75GB12T4T |
| Kategorie | IGBT Full Silicon |
| Configuration: | Bridge 3f -SE(single emiter) |
| Construction: | 6*(IGBT+D) |
| Number of circuits (in case) | 6 ks |
| Case type: | Modul |
| Case [inch] : | SEMITOP-3 |
| Type of material: | Si-Silicon |
| Material Base | Ceramic |
| RoHS | Yes |
| REACH | No |
| NOVINKA | A |
| RoHS1 | Ano |
Packaging and weight:
| Weight: | 39 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 10 |
Electro-physical parameters:
| IFAV / IC (Tc/Ta=25°C) | 80 [A] |
| Idc max (Tc/Ta=70÷79°C) | 65 [A] |
| Uisol (@25°C/1min/50Hz) | 2500 [V] |
| UF (maximum forward voltage) | 2.1 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| UCE (sat) (@25°C) | 1.85 [V] |
| Qg (Total Gate Charge) | 570 [nC] |
| Cin (Input Capacitance) | 4400 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 175 [°C] |
| Rthjc1 IGBT | 0.74 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.97 [°C/W] |
| L - Length | 57 [mm] |
| W - Width | 63 [mm] |
| H - Height | 17 [mm] |