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SKM200GB12F4SiC2

IGBT 1200V Hybrid SiC

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SKM200GB12F4SiC2 Semikron
SKM200GB12F4SiC2 Semikron
No longer in stock
ID Code:173633
Manufacturer:Semikron
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: SKM200GB12F4SiC2
Unit:: pcs
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QuantityPrice without VATPrice with VAT
IGBT 1200V Hybrid SiC

Basic information:

Marking manufacturerSKM200GB12F4SiC2 
KategorieIGBT Hybrid SiC 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Type of material:SiC Hybrid 
Material BaseCu 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:SEMITRANS-3 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:355 [g]
Type of packaging:BOX 
Small package (Number of units):12 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)312 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)312 [A]
Idc max (Tc/Ta=80÷89°C)239 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.74 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.06 [V]
Qg (Total Gate Charge)1134 [nC]
Cin (Input Capacitance)12300 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.115 [°C/W]
Rthjc2 Dioda, Tyristor0.21 [°C/W]
RM - Pitch pins28 [mm]
W - Width 61.4 [mm]
L - Length 106.4 [mm]
H - Height 30.5 [mm]
Rozměry/Velikost (LxWxH)108x62x31 [mm]

Alternatives and replacements

Alternative 1:185571 - SKM200GB12F4SiC3 (SMK) 

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RoHS
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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