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Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

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STGW39NC60VD ST Microelectronics
STGW39NC60VD ST Microelectronics
ID Code:185517
Manufacturer:ST Microelectronics
Price with VAT : 2,4553 €
Price without VAT : 2,0291 €
VAT:21 %
Availability:In stock
Total stock:26 pcs
Marking manufacturer: STGW39NC60VD
Central warehouse Zdice: 26 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 2,0291 €2,4553 €
15 + 1,9148 €2,3169 €
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

Basic information:

Marking manufacturerSTGW39NC60VD 
Type of casing:THT 
KategorieIGBT Full Silicon 
Type of material:!_si-silicon_! 

Packaging and weight:

Weight:5.1 [g]
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)80 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)80 [A]
Idc max (Tc/Ta=100÷109°C)40 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UCE (sat) (@25°C)1.8 [V]
Input Logic Level (UGS level)15V 
tr (Turn-on / rise time)14 [ns]
tf/tq (Turn-off / fall time)128 [ns]
Qg (Total Gate Charge)126 [nC]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.5 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Number of Pins
Dimensions of outlets0.00 [mm]

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